 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| KSD1408 KSD1408 Power Amplifier Applications * Complement to KSB1017 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 80 80 5 4 0.4 25 150 - 55 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 50mA, IB = 0 VCB = 80V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A. IB = 0.3A VCE = 5V, IC = 3A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz 40 15 50 0.45 1 8 90 1.5 1.5 V V MHz pF Min. 80 Typ. Max. 30 100 240 Units V A A hFE1 Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1408 Typical Characteristics 4.0 1000 I B= A A 0m 60mA 0m 20 1 24 I B= I B= 1 IB= 20m A IC[A], COLLECTOR CURRENT IB 0m = 10 A VCE = 5V 3.2 I B = 80 mA IB = 60mA 2.4 hFE, DC CURRENT GAIN 100 IB = 40mA 1.6 IB = 20mA 10 0.8 0.0 0 1 2 3 4 IB = 0mA 5 1 0.001 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 4 VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB VCE = 5V IC[A], COLLECTOR CURRENT 3 1 2 0.1 1 0.01 0.001 0.01 0.1 1 10 0 0.0 0.4 0.8 1.2 1.6 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 35 30 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 25 10 ICmax(pulse) S 1m 10 IC(max) 20 10 0m DC m s S 1S 15 1 10 VCEOMAX 5 0.1 1 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1408 Package Demensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 15.87 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
Price & Availability of KSD1408
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |